| 摘要 |
<P>PROBLEM TO BE SOLVED: To enhance light extraction efficiency in a group III nitride semiconductor light-emitting element. <P>SOLUTION: A p-clad layer 15 composed of p-AlGaN is formed on a luminous layer 14 by MOCVD. The pressure is set at 30 kPa, and the Mg concentration is set at 1.5×10<SP POS="POST">20</SP>/cm<SP POS="POST">3</SP>. Consequently, a large number of regions of nitrogen polarity are generated in the crystal of group III element polarity, and the surface of the p-clad layer 15 has an uneven shape of hexagonal prism. Subsequently, a film-like p-contact layer 16 consisting of GaN is formed on the p-clad layer 15 along the uneven shape by MOCVD. <P>COPYRIGHT: (C)2013,JPO&INPIT |
