| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor storage device capable of suppressing an offset voltage without making design satisfying design constraints difficult. <P>SOLUTION: A semiconductor storage device of the present invention comprises: a plurality of memory cells; a plurality of word lines WL0 to WLm-1; a plurality of bit line pairs BLT0 and BLB0 to BLTn-1 and BLBn-1; a column selector 13 that connects any one of the plurality of bit line pairs to a data line pair DLT and DLB; a precharge circuit 14 that precharges the data line pair DLT and DLB; a sense amplifier 15 that amplifies a potential difference between the data line pair DLT and DLB; and a control circuit 16 that controls current that drives the sense amplifier 15 on the basis of the potentials of the data line pair DLT and DLB which are set when a predetermined time period has elapsed after the potential difference between the precharged data line pair DLT and DLB is amplified by the sense amplifier 15. <P>COPYRIGHT: (C)2013,JPO&INPIT |
