| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a thin film transistor which can be manufactured in a low temperature and a low cost manufacturing process and which is excellent in transistor characteristics, and provide a manufacturing method of the thin film transistor. <P>SOLUTION: A manufacturing method of a thin film transistor having a substrate, a gate electrode, a gate insulation layer, an oxide semiconductor layer, a source electrode, and a drain electrode, comprises: an oxide semiconductor layer formation process of forming the oxide semiconductor layer in an atmosphere containing an oxidized gas; and a carrier concentration control process of applying, after the oxide semiconductor layer formation process, oxygen deficiency to at least a channel region of the oxide semiconductor layer to control a carrier concentration in the channel region. <P>COPYRIGHT: (C)2013,JPO&INPIT |
