| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a p-type ZnO-based semiconductor material which can satisfactorily form a thin film even at low temperature. <P>SOLUTION: In the p-type ZnO-based semiconductor material, a Zn<SB POS="POST">1-x</SB>Ni<SB POS="POST">x</SB>O thin film is formed on a substrate by sputtering a mixed material of ZnO and NiO as a sputtering target, Zn<SB POS="POST">1-x</SB>Ni<SB POS="POST">x</SB>O (x is a ratio of the number of Ni moles with respect to the total number of moles of Zn and Ni) is an oxide in which ZnO and NiO are mixed with each other, it is preferable that the value of x is set at 0.65 or less and the offset amount of a valence band top with respect to ZnO is controlled within 1 eV, and it is preferable that the value of x is small. On the other hand, when considering that an electrical conductivity type is determined to be a p type and an electrical resistance is reduced, it is preferable that the value of x in Zn<SB POS="POST">1-X</SB>Ni<SB POS="POST">X</SB>O is 0.13 or more. <P>COPYRIGHT: (C)2013,JPO&INPIT |
