| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a polishing agent for polishing copper capable of polishing a copper film smoothly at a high polishing speed, suppressing the polishing speed of a barrier film, and ensuring excellent finish and sufficient productivity even in the polishing of a high performance wiring board or a thick metal film such as TSV, and to provide a polishing method using the same. <P>SOLUTION: A polishing agent for polishing copper contains (A) an inorganic acid having a valence of 2 or more, (B) an amino acid, (C) an agent for forming a protective film, (D) abrasive grains, (E) an oxidizing agent, and (F) water, wherein the polishing agent for polishing copper contains the component (A) of 0.08 mol/kg or more, the component (B) of 0.20 mol/kg or more, and the component (C) of 0.02 mol/kg or more, has an average grain size of component (D) of 100 nm or more, and satisfies at least one of following requirements (i) and (ii). (i) The ratio of the content of component (A) to the content of component (C) is 2.00 or more. (ii) The polishing agent for polishing copper further contains at least one kind selected from organic acids (G) and anhydrides thereof. <P>COPYRIGHT: (C)2013,JPO&INPIT |
