| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a polishing method capable of preventing the number of crystal defects (COP) from increasing, and improving the flatness of a wafer while exhibiting a high polishing efficiency. <P>SOLUTION: In the method of polishing a silicon wafer where COP exists, the silicon wafer where COP exists is polished using an abrasive material containing at least water, silica and tetramethylammonium hydroxide. The concentration of tetramethylammonium hydroxide is 0.01 mass% or more and less than 0.3 mass% for the total mass of the abrasive material, the concentration of silica is 0.1 mass% or more and 1.2 mass% or less for the total mass of the abrasive material, and the primary particle size of silica is 18 nm or more. <P>COPYRIGHT: (C)2013,JPO&INPIT |
