| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a piezoelectric film element and a piezoelectric film device which excel in piezoelectric characteristics and have high reliability. <P>SOLUTION: In a piezoelectric film element 10 having at least a lower electrode layer 2 and a piezoelectric film 4 derived from non-lead alkali niobium oxide disposed on a substrate 1, the lower electrode layer 2 has one of cubic, tetragonal, prismatic, hexagonal, monoclinic, triclinic and trigonal crystal structures or a state where two or more of those crystal structures coexist, and is oriented preferentially to a specific crystal axis in two or less of crystal axes of the crystal structures. And, in an X-ray diffraction intensity distribution of crystal faces referenced to at least one of the crystal axes on the substrate 1 as a normal line thereof, the relative standard deviation of the X-ray diffraction intensity distribution of the crystal faces is 57% or less. <P>COPYRIGHT: (C)2013,JPO&INPIT |
