| 摘要 |
PURPOSE: A semiconductor memory device and an operating method thereof are provided to improve the reliability of an operation by suppressing the distribution change of a threshold voltage of memory cells due to an interference phenomenon. CONSTITUTION: A first LSB program loop is performed to store a first LSB data in cells included in an even page of a selected word line(S601). A second LSB program loop is performed to raise threshold voltage of the cells selected in an odd page higher than an LSB verification voltage and raise the threshold voltage of over erase cells which is lower than the over erase reference voltage of a negative potential to be higher than the over erase reference voltage(S603). The first MSB program loop is performed to store a first MSB data in the cells of an even page in which the first LSB program loop is completed(S605). The second MSB program loop is performed to store a second MSB data in the cells of an odd page in which the second LSB program loop is completed(S607). [Reference numerals] (AA) Start; (BB,DD) Yes; (CC,EE) No; (FF) End; (S601) Performing a first LSB program loop of cells included in an even page of a selected word line; (S603-1) Performing an LSB program operation of an odd page of the selected word line; (S603-2) First verification operation(Vt detects a cell for a program lower than a target voltage); (S603-3) Does Vt detect the cell for the program lower than the target voltage?; (S603-4) Second verification operation(Vt detects an over erase cell lower than an over erase reference voltage); (S603-5) Does Vt detect the over erase cell lower than the over erase reference voltage; (S605) Performing a first MSB program loop of the cells included in an even page of the selected word line; (S607) Performing a second MSB program loop of the cells included in an odd page of the selected word line |
