This semiconductor module comprises: an insulating substrate (200) that is formed of AlN and has a first surface (201) and a second surface (202) facing opposite directions; a first conductor layer (210) that is formed on the first surface (201); a second conductor layer (220) that is formed on the second surface (202); a semiconductor element (300) that is bonded to the first conductor layer (210) with a first solder layer (510) being interposed therebetween; and a heat dissipation plate (400) that is bonded to the second conductor layer (220) with a second solder layer (520) being interposed therebetween and has a rectangular shape when viewed in plan. The heat dissipation plate (400) is curved so as to protrude toward the direction to which the second surface (202) faces when viewed in the width direction.
