PHOTO VOLTAIC DEVICE

摘要

A photo voltaic device is provided with a semiconductor substrate (10), an i-type amorphous layer (12i) or an i-type amorphous layer (16i) formed on the front surface or the rear surface of the semiconductor substrate (10), a p-type amorphous layer (12p) or an n-type amorphous layer (16n) formed on the i-type amorphous layer (12i) or the i-type amorphous layer (16i). The i-type amorphous layer (12i) or the i-type amorphous layer (16i) has oxygen concentration profiles wherein the concentration is decreased in a film thickness direction in a stepwise pattern from near the boundary face with the semiconductor substrate (10).