发明名称 METHODS FOR MANUFACTURING HIGH DIELECTRIC CONSTANT FILMS
摘要 Provided are methods for depositing a cerium doped hafnium containing high-k dielectric film on a substrate. The reagents of specific methods include hafnium tetrachloride, an organometallic complex of cerium and water.
申请公布号 WO2012145196(A3) 申请公布日期 2013.01.03
申请号 WO2012US32902 申请日期 2012.04.10
申请人 APPLIED MATERIALS, INC.;KIM, HYUNGJUN;KIM, WOO-HEE;KIM, MIN-KYU;HUNG, STEVEN;NOORI, ATIF;THOMPSON, DAVID;ANTHIS, JEFFREY W. 发明人 KIM, HYUNGJUN;KIM, WOO-HEE;KIM, MIN-KYU;HUNG, STEVEN;NOORI, ATIF;THOMPSON, DAVID;ANTHIS, JEFFREY W.
分类号 H01L21/31;H01L21/8238 主分类号 H01L21/31
代理机构 代理人
主权项
地址