| 发明名称 |
MIXED MODE PROGRAMMING FOR PHASE CHANGE MEMORY |
| 摘要 |
Subject matter disclosed herein relates to a memory device, and more particularly to write performance of a phase change memory.
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| 申请公布号 |
US2013003450(A1) |
申请公布日期 |
2013.01.03 |
| 申请号 |
US200913512008 |
申请日期 |
2009.12.29 |
| 申请人 |
MICRON TECHNOLOGY INC;BEDESCHI FERDINANDO |
发明人 |
BEDESCHI FERDINANDO |
| 分类号 |
G11C11/00 |
主分类号 |
G11C11/00 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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