发明名称 |
POWER SEMICONDUCTOR MODULE |
摘要 |
The respective main electrodes of the semiconductor switching elements such as IGBTs, which are respectively mounted on the plurality of insulating boards, are electrically connected to each other via the conductor member. This configuration makes it possible to suppress the occurrence of the resonant voltage due to the junction capacity and the parasitic inductance of each semiconductor switching element.
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申请公布号 |
US2013001805(A1) |
申请公布日期 |
2013.01.03 |
申请号 |
US201213533273 |
申请日期 |
2012.06.26 |
申请人 |
AZUMA KATSUNORI;YASUDA KENTARO;FUJITA TAKAHIRO;SAITO KATSUAKI;KOIKE YOSHIHIKO;HIYOSHI MICHIAKI |
发明人 |
AZUMA KATSUNORI;YASUDA KENTARO;FUJITA TAKAHIRO;SAITO KATSUAKI;KOIKE YOSHIHIKO;HIYOSHI MICHIAKI |
分类号 |
H01L23/522 |
主分类号 |
H01L23/522 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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