发明名称 |
SEMICONDUCTOR LIGHT DETECTING ELEMENT |
摘要 |
A semiconductor light detecting element is provided with a silicon substrate having a semiconductor layer, and an epitaxial semiconductor layer grown on the semiconductor layer and having a lower impurity concentration than the semiconductor layer; and conductors provided on a surface of the epitaxial semiconductor layer. A photosensitive region is formed in the epitaxial semiconductor layer. Irregular asperity is formed at least in a surface opposed to the photosensitive region in the semiconductor layer. The irregular asperity is optically exposed.
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申请公布号 |
US2013001651(A1) |
申请公布日期 |
2013.01.03 |
申请号 |
US201113634249 |
申请日期 |
2011.02.22 |
申请人 |
HAMAMATSU PHOTONICS K.K.;MASE MITSUHITO;SAKAMOTO AKIRA;SUZUKI TAKASHI;YAMAZAKI TOMOHIRO;FUJII YOSHIMARO |
发明人 |
MASE MITSUHITO;SAKAMOTO AKIRA;SUZUKI TAKASHI;YAMAZAKI TOMOHIRO;FUJII YOSHIMARO |
分类号 |
H01L31/102 |
主分类号 |
H01L31/102 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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