METHOD FOR DEPOSITING AMORPHOUS SILICON THIN FILM BY CHEMICAL VAPOR DEPOSITION
摘要
Provided is a method of depositing an amorphous silicon thin film by chemical vapor deposition (CVD) to prevent bubble defect occurring when an amorphous silicon thin film is deposited on a substrate contaminated by air exposure. The deposition method includes cleaning a surface of the contaminated substrate with a reaction gas activated by plasma and depositing an amorphous silicon thin film on the cleaned substrate. Here, a vacuum state is maintained from the substrate cleaning step to the thin film deposition step in order to prevent contamination of the surface of the cleaned substrate by re-exposure to air.
申请公布号
WO2010032978(A3)
申请公布日期
2013.01.03
申请号
WO2009KR05313
申请日期
2009.09.18
申请人
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE;YANG, WOO SEOK;CHO, SEONG MOK;RYU, HO JUN;CHEON, SANG HOON;YU, BYOUNG GON;CHOI, CHANG AUCK
发明人
YANG, WOO SEOK;CHO, SEONG MOK;RYU, HO JUN;CHEON, SANG HOON;YU, BYOUNG GON;CHOI, CHANG AUCK