| 摘要 |
In accordance with an embodiment, a magnetoresistive element includes a lower electrode, a first magnetic layer on the lower electrode, a first interfacial magnetic layer on the first magnetic layer, a nonmagnetic layer on the first interfacial magnetic layer, a second interfacial magnetic layer on the nonmagnetic layer, a second magnetic layer on the second interfacial magnetic layer; and an upper electrode layer on the second magnetic layer. Either the first magnetic and interfacial magnetic layers or the second magnetic and interfacial magnetic layers constitute a storage layer. The other layers of the first magnetic and interfacial magnetic layers and the second magnetic and interfacial magnetic layers constitute a reference layer. The lower electrode includes an alloy layer or mixture layer of a precious metal and a transition element or a rare earth element, or comprises a conductive oxide layer.
|
