发明名称 |
SYSTEMS AND METHODS FOR CONTROLLING ETCH SELECTIVITY OF VARIOUS MATERIALS |
摘要 |
A method for filling a recessed feature of a substrate includes a) at least partially filling a recessed feature of a substrate with tungsten-containing film using at least one of chemical vapor deposition (CVD) and atomic layer deposition (ALD); b) at a predetermined temperature, using an etchant including activated fluorine species to selectively etch the tungsten-containing film more than an underlying material of the recessed feature without removing all of the tungsten-containing film at a bottom of the recessed feature; and c) filling the recessed feature using at least one of CVD and ALD.
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申请公布号 |
US2013005140(A1) |
申请公布日期 |
2013.01.03 |
申请号 |
US201213536095 |
申请日期 |
2012.06.28 |
申请人 |
NOVELLUS SYSTEMS, INC.;JENG ESTHER;CHANDRASHEKAR ANAND;HUMAYUN RAASHINA;DANEK MICHAL;POWELL RONALD |
发明人 |
JENG ESTHER;CHANDRASHEKAR ANAND;HUMAYUN RAASHINA;DANEK MICHAL;POWELL RONALD |
分类号 |
H01L21/768;H01L21/306 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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