发明名称 |
SEMICONDUCTOR EPITAXIAL SUBSTRATE |
摘要 |
Provided is a semiconductor epitaxial substrate which has low semiconductor layer mosaicity and is suitable for the production of a semiconductor device. Specifically provided is a semiconductor epitaxial substrate formed by epitaxially growing a graded buffer layer which is compositionally graded such that the lattice constant increases in stages within a range from a first lattice constant to a second lattice constant larger than the first lattice constant, and a semiconductor layer produced from a semiconductor crystal having the second lattice constant on a semiconductor substrate having the first lattice constant. The angle formed by the (mnn) plane (m and n are integers except m=n=0) of the semiconductor layer and the (mnn) plane of the semiconductor substrate is set to +0.05° or more when the direction that rotates clockwise from the [100] direction to the [011] direction is positive.
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申请公布号 |
US2013001645(A1) |
申请公布日期 |
2013.01.03 |
申请号 |
US201113582365 |
申请日期 |
2011.03.01 |
申请人 |
KAKUTA KOJI;NOZAKI TATSUYA;KANAI SUSUMU |
发明人 |
KAKUTA KOJI;NOZAKI TATSUYA;KANAI SUSUMU |
分类号 |
H01L29/02;H01L21/66 |
主分类号 |
H01L29/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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