发明名称 |
DISPLAY DEVICE, THIN-FILM TRANSISTOR USED FOR DISPLAY DEVICE, AND METHOD OF MANUFACTURING THIN-FILM TRANSISTORS |
摘要 |
A thin-film transistor used for a display device includes a gate electrode formed on an insulating substrate; a gate insulating film formed on the substrate so as to cover the gate electrode; a semiconductor layer composed of first semiconductor layer and second semiconductor layer formed on the gate insulating film; an ohmic contact layer formed on the semiconductor layer; and a source electrode and a drain electrode formed on the ohmic contact layer so as to be spaced from each other. The transistor further includes an etching stopper made of spin-on glass (SOG) on a channel-forming region of the semiconductor layer.
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申请公布号 |
US2013001572(A1) |
申请公布日期 |
2013.01.03 |
申请号 |
US201213616673 |
申请日期 |
2012.09.14 |
申请人 |
PANASONIC CORPORATION;SATOH EIICHI;KAWACHI GENSHIROU;KAWASHIMA TAKAHIRO |
发明人 |
SATOH EIICHI;KAWACHI GENSHIROU;KAWASHIMA TAKAHIRO |
分类号 |
H01L27/15;H01L21/336 |
主分类号 |
H01L27/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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