| 摘要 |
An Electro-Static Discharge (ESD) protection device is provided. The ESD protection device includes a metal-oxide semiconductor (MOS) transistor, including a source area having a surface on which a first silicide is formed, the source area including a source connecting area including a first connecting portion formed on the first silicide, and a source extension area, a gate arranged in parallel with the source area, and a drain area arranged in parallel with the source area and the gate, the drain area having a surface on which a second silicide is formed, the drain area including a drain connecting area formed opposite the source extension area, the drain connecting area including second connection portion formed on the second silicide, and a drain extension area formed opposite the source connecting area.
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