发明名称 Microlithographic extreme UV (EUV) projection exposure apparatus for imaging reflective mask on photosensitive layer, has drive element that is adapted to reflective switching elements to emit projection and heating light rays
摘要 <p>The EUV projection exposure apparatus (10) has a projection light source and a heating light source that respectively generate projection light ray and heating light ray. The catoptric projection lenses (26) are equipped with imaging mirrors, and an object plane and an image plane in which a mask (14) and photosensitive layer (16) are arranged. A drive element is adapted to reflective switching elements such that projection light rays and heating light rays are emitted from the projection lenses corresponding to two different positions of switching elements. An independent claim is included for a method for operating microlithographic extreme UV projection exposure apparatus.</p>
申请公布号 DE102011113521(A1) 申请公布日期 2013.01.03
申请号 DE201110113521 申请日期 2011.09.15
申请人 CARL ZEISS SMT GMBH 发明人 BITTNER, BORIS;WABRA, NORBERT
分类号 G03F7/20 主分类号 G03F7/20
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