发明名称 |
INTERACTION STRUCTURE FOR A STORAGE MEDIUM |
摘要 |
A process manufactures an interaction structure for a storage medium. The process includes forming a first interaction head provided with a first conductive region having a sub-lithographic dimension. The step of forming a first interaction head includes: forming on a surface a first delimitation region having a side wall; depositing a conductive portion having a deposition thickness substantially matching the sub-lithographic dimension on the side wall; and then defining the conductive portion. The sub-lithographic dimension preferably is between 1 and 50 nm, more preferably 20 nm.
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申请公布号 |
US2013001719(A1) |
申请公布日期 |
2013.01.03 |
申请号 |
US201213612575 |
申请日期 |
2012.09.12 |
申请人 |
STMICROELECTRONICS S.R.L.;RIVA CATERINA;MURARI BRUNO;FRATTINI GIOVANNI |
发明人 |
RIVA CATERINA;MURARI BRUNO;FRATTINI GIOVANNI |
分类号 |
H01L29/82 |
主分类号 |
H01L29/82 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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