发明名称 |
THIN FILM TRANSISTOR AND PRESS SENSING DEVICE USING THE SAME |
摘要 |
A thin film transistor and a press sensing device using the thin film transistor are disclosed. The thin film transistor, comprises a source electrode; a drain electrode spaced from the source electrode; a semiconductor layer electrically connected with the source electrode and the drain electrode, a channel defined in the semiconductor layer and located between the source electrode and the drain electrode; and a gate electrode electrically insulated from the semiconductor layer; and an insulative layer configured for insulating the source electrode, the drain electrode, and the semiconductor layer from each other, wherein the insulative layer is made of a polymeric material with an elastic modulus ranged from about 0.1 megapascal (MPa) to about 10 MPa.
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申请公布号 |
US2013001556(A1) |
申请公布日期 |
2013.01.03 |
申请号 |
US201113323911 |
申请日期 |
2011.12.13 |
申请人 |
HON HAI PRECISION INDUSTRY CO., LTD.;TSINGHUA UNIVERSITY;HU CHUN-HUA;LIU CHANG-HONG;FAN SHOU-SHAN |
发明人 |
HU CHUN-HUA;LIU CHANG-HONG;FAN SHOU-SHAN |
分类号 |
H01L29/786;H01L29/04;H01L29/84 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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