| 摘要 |
The purpose of the present invention is to provide a gas barrier film which exhibits extremely excellent gas barrier performance and high durability, a manufacturing process therefor, and an electronic device using the same. A gas barrier film comprising a substrate and at least two gas barrier layers which each contain Si, O and N as the essential elements and which are laminated on the substrate, characterized in that the total thicknesswise composition distribution of the gas barrier layers includes both a thicknesswise continuous region which has a thickness of 20nm or more and a composition satisfying requirement (A) and a thicknesswise continuous region which has a thickness of 50nm or more and a composition satisfying requirement (B) in this order from the substrate side. Requirement (A): when the composition of the gas barrier layer is represented by SiOwNx, w=0.8, x=0.3, 2w+3x=4, and requirement (B): when the composition of the gas barrier layer is represented by SiOyNz, 0<y=0.55, z=0.55, and 2y+3z=4. |
