发明名称 SMART BRIDGE FOR MEMORY CORE
摘要 An apparatus includes a first memory die including a first memory core, a second memory die including a second memory core, and a periphery die coupled to the first memory die and to the second memory die. The periphery die includes periphery circuitry corresponding to the first memory core and periphery circuitry corresponding to the second memory core. The periphery die is responsive to a memory controller and configured to initiate a first memory operation at the first memory core and a second memory operation at the second memory core.
申请公布号 US2013003480(A1) 申请公布日期 2013.01.03
申请号 US201113247635 申请日期 2011.09.28
申请人 SANDISK TECHNOLOGIES INC.;D'ABREU MANUEL ANTONIO;SKALA STEPHEN;PANTELAKIS DIMITRIS;NAIR RADHAKRISHNAN;PANCHOLI DEEPAK 发明人 D'ABREU MANUEL ANTONIO;SKALA STEPHEN;PANTELAKIS DIMITRIS;NAIR RADHAKRISHNAN;PANCHOLI DEEPAK
分类号 G11C7/00 主分类号 G11C7/00
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