发明名称 IMPROVED RELIABILITY IN SEMICONDUCTOR DEVICE CONTROL
摘要 <p>A gate control device (30) for a semiconductor device comprises at least one power supply module (42, 46), at least one optical communication interface (40, 44) for receiving optical signals (OS1, OS2) from two valve control units (36, 38) and converting them to electric signals for supply to a corresponding power supply module (42, 46), where in normal operations mode one valve control unit is an active valve control unit and the other is a standby valve control unit, where the optical signal of an active unit energizes the gate control device and provides semiconductor device controlling data, a semiconductor device control module (52) and a reliability control module (50) that performs selection of active valve control unit.</p>
申请公布号 WO2013000499(A1) 申请公布日期 2013.01.03
申请号 WO2011EP60720 申请日期 2011.06.27
申请人 ABB TECHNOLOGY AG;HAEFNER, JUERGEN;DAVIDSSON, MIKAEL;SILJESTROEM, ERIKA 发明人 HAEFNER, JUERGEN;DAVIDSSON, MIKAEL;SILJESTROEM, ROLAND
分类号 H02H3/05;H02M1/092 主分类号 H02H3/05
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