THIN FILM TRANSISTOR DEVICE AND METHOD FOR PRODUCING THIN FILM TRANSISTOR DEVICE

摘要

This thin film transistor device (10) is equipped with: a gate electrode (2) formed on a substrate (1); a gate insulating film (3) formed on the gate electrode (2); a crystalline silicon thin film (4) formed on the gate insulating film (3) and having a channel region; a semiconductor layer (5) formed on the channel region; an insulating film (7) that is formed at a region on the semiconductor layer (5) and corresponding to the channel region, and that comprises an organic material; an intrinsic amorphous silicon thin film (6) formed on the semiconductor layer (5) at both sides of the insulating film (7); a source electrode (9S) formed above one of the intrinsic amorphous silicon thin films (6); and a drain electrode (9D) formed above the other of the intrinsic amorphous silicon thin films (6). The local energy-level density of the semiconductor layer (5) is lower than that of the intrinsic amorphous silicon thin films (6), and the band gap of the semiconductor layer (5) is smaller than that of the intrinsic amorphous silicon thin films (6).