发明名称 |
STRUCTURE AND METHOD TO INTEGRATE EMBEDDED DRAM WITH FINFET |
摘要 |
Various embodiment integrate embedded dynamic random access memory with fin field effect transistors. In one embodiment, a first fin structure and at least a second fin structure are formed on a substrate. A deep trench area is formed between the first and second fin structures. A high-k metal gate is formed within the deep trench area. The high-k metal gate includes a high-k dielectric layer and a metal layer. A polysilicon material is deposited within the deep trench area adjacent to the metal layer. The high-k metal gate and the polysilicon material are recessed and etched to an area below a top surface of a substrate insulator layer. A poly strap is formed in the deep trench area. The poly strap is dimensioned to be below a top surface of the first and second fin structures. The first and second fin structures are electrically coupled to the poly strap.
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申请公布号 |
US2013005129(A1) |
申请公布日期 |
2013.01.03 |
申请号 |
US201213612069 |
申请日期 |
2012.09.12 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION;KANAKASABAPATHY SIVANANDA;JAGANNATHAN HEMANTH;WANG GENG |
发明人 |
KANAKASABAPATHY SIVANANDA;JAGANNATHAN HEMANTH;WANG GENG |
分类号 |
H01L21/283 |
主分类号 |
H01L21/283 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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