| 发明名称 |
METAL BARRIER-DOPED METAL CONTACT LAYER |
| 摘要 |
A photovoltaic device can include an intrinsic metal layer adjacent to a semiconductor absorber layer; and a doped metal contact layer adjacent to the intrinsic metal layer, where the doped metal contact layer includes a metal base material and a dopant.
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| 申请公布号 |
US2013005075(A1) |
申请公布日期 |
2013.01.03 |
| 申请号 |
US201213615128 |
申请日期 |
2012.09.13 |
| 申请人 |
CHEN LONG;GUPTA AKHLESH;ABKEN ANKE;BULLER BENYAMIN |
发明人 |
CHEN LONG;GUPTA AKHLESH;ABKEN ANKE;BULLER BENYAMIN |
| 分类号 |
H01L31/18 |
主分类号 |
H01L31/18 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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