PHASE-CHANGE MEMORY DEVICE, FLEXIBLE PHASE-CHANGE MEMORY DEVICE USING INSULATING NANO-DOT AND MANUFACTURING METHOD FOR THE SAME

摘要

Provided are a phase-change memory device using insulating nanoparticles, a flexible phase-change memory device and a method for manufacturing the same. The phase-change memory device includes an electrode, and a phase-change layer in which a phase change occurs depending on heat generated from the electrode, wherein insulating nanoparticles formed from a self-assembled block copolymer are provided between the electrode and the phase-change layer undergoing crystallization and amorphization.