发明名称 METHOD FOR PRODUCING BUFFER LAYER AND METHOD FOR MANUFACTURING PHOTOELECTRIC CONVERSION ELEMENT
摘要 <p>[Problem] To produce a Zn-based buffer layer, to which less particulate solid materials adhere, by simple processes by successfully covering the underlying base without dissolving the substrate by a CBD method. [Solution] A film is formed on a substrate (9) that contains a metal, which is capable of producing hydroxide ions and complex ions, using a reaction solution (11) that contains a component (Z) that is at least one kind of zinc source, a component (S) that is at least one kind of sulfur source, a component (N) that is at least one kind of ammonia and/or ammonium salt, and water, with the concentration of the component (Z) being 0.01-0.08 M and the concentration of the component (N) being 0.4-7.0 M, under such conditions that the reaction temperature is 70-95°C with use of a buffer layer production apparatus (1) which comprises a reaction vessel (2) that retains the reaction solution (11), an opening portion (3) that is formed in the wall of the reaction vessel (2) and is smaller than the size of the substrate (9), and a holding member (4) that is capable of holding the substrate (9) at a position corresponding to the opening portion (3) on the outer wall surface of the reaction vessel (2) so that the entire of the opening portion (3) is covered with the substrate.</p>
申请公布号 WO2013001807(A1) 申请公布日期 2013.01.03
申请号 WO2012JP04159 申请日期 2012.06.27
申请人 FUJIFILM CORPORATION;KAGA, HIROSHI;KAWANO, TETSUO 发明人 KAGA, HIROSHI;KAWANO, TETSUO
分类号 H01L31/04;H01L21/368 主分类号 H01L31/04
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