INTEGRATED CIRCUIT COMPRISING A MOSFET HAVING BALLAST RESISTORS AND CORRESPONDING MANUFACTURING METHOD

摘要

An integrated circuit including a well region (156) having a first doping level and a plurality of semiconductor regions (154) implanted in the well region. Each of the plurality of semiconductor regions has a second doping level greater than the first doping level. A plurality of polysilicon regions (202-1, 202-2, 204-1, 204-2; 302-1, 302-2, 304-1, 304-2) arranged on the plurality of semiconductor regions forms a plurality of ballast resistors. The polysilicon regions are respectively connected to the semiconductor regions, which are degenerated below said polysilicon regions so as to create an additional resistivity. The plurality of semiconductor regions constitutes a drain region of a metal-oxide semiconductor field-effect transistor (MOSFET).