ETCHING SOLUTION AND ETCHING PROCESS USING SAME

摘要

Provided is an etching solution for copper oxide. In a case where a copper oxide is used as a thermal reaction type resist material and exposed to a laser, the etching solution can etch the resulting laser-exposed resist material selectively between exposed and unexposed areas and at a controlled etch rate. Further, provided is an etching process using the same. An etching solution for use in removing selectively a copper oxide having a specific valence from a copper oxide-containing layer which contains copper oxides different in valence, characterized by: comprising an amino acid, a chelating agent, and water as the essential components; and having both a weight concentration of the amino acid which is higher than that of the chelating agent and a pH of 3.5 or higher.