发明名称 |
COMPOSITE SUBSTRATE AND PROCESS FOR PRODUCING SAME |
摘要 |
<p>[Problem] To provide a composite substrate which includes a silicon substrate having few lattice defects. [Solution] A composite substrate (50) that comprises a first substrate (10), which is constituted of a semiconductor material, a second substrate (40), which is constituted of an insulating material, and an oxide layer (30) and a semiconducting epitaxial layer (20) which have been disposed between the substrates (10) and (40) in this order from the second substrate (40) side, the oxide layer (30) having oxygen atoms arranged on the side thereof which faces the epitaxial layer (20).</p> |
申请公布号 |
WO2013002212(A1) |
申请公布日期 |
2013.01.03 |
申请号 |
WO2012JP66263 |
申请日期 |
2012.06.26 |
申请人 |
KYOCERA CORPORATION;KITADA, MASANOBU;HONJO, TOMOFUMI |
发明人 |
KITADA, MASANOBU;HONJO, TOMOFUMI |
分类号 |
H01L21/02;H01L27/12 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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