发明名称 COMPOSITE SUBSTRATE AND PROCESS FOR PRODUCING SAME
摘要 <p>[Problem] To provide a composite substrate which includes a silicon substrate having few lattice defects. [Solution] A composite substrate (50) that comprises a first substrate (10), which is constituted of a semiconductor material, a second substrate (40), which is constituted of an insulating material, and an oxide layer (30) and a semiconducting epitaxial layer (20) which have been disposed between the substrates (10) and (40) in this order from the second substrate (40) side, the oxide layer (30) having oxygen atoms arranged on the side thereof which faces the epitaxial layer (20).</p>
申请公布号 WO2013002212(A1) 申请公布日期 2013.01.03
申请号 WO2012JP66263 申请日期 2012.06.26
申请人 KYOCERA CORPORATION;KITADA, MASANOBU;HONJO, TOMOFUMI 发明人 KITADA, MASANOBU;HONJO, TOMOFUMI
分类号 H01L21/02;H01L27/12 主分类号 H01L21/02
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