发明名称 |
SEMICONDUCTOR MEMORY DEVICES AND METHODS OF MANUFACTURING THE SAME |
摘要 |
A semiconductor memory device includes a substrate and a plurality of rows of memory cells. The substrate comprises a plurality of isolation structures and a plurality of active regions. Each of the active regions is spaced apart from another active region by one of the isolation structures. In a cross-section of the substrate between two rows of memory cells in a direction parallel to the two rows of memory cells, a maximum height of each isolation structure with respect to a bottom of the substrate is lower than or equal to minimum heights of active regions adjacent thereto.
|
申请公布号 |
US2013001669(A1) |
申请公布日期 |
2013.01.03 |
申请号 |
US201113172449 |
申请日期 |
2011.06.29 |
申请人 |
MACRONIX INTERNATIONAL CO., LTD.;LIN LO-YUEH |
发明人 |
LIN LO-YUEH |
分类号 |
H01L29/788;H01L21/336 |
主分类号 |
H01L29/788 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|