发明名称 METHOD FOR PRODUCING SEMICONDUCTOR LAYER, METHOD FOR PRODUCING PHOTOELECTRIC CONVERSION DEVICE, AND SEMICONDUCTOR STARTING MATERIAL
摘要 <p>The present invention provides a semiconductor layer of high photoelectric conversion efficiency, and a photoelectric conversion device employing the same. This method for producing a semiconductor layer comprises: a step for forming a film that includes a metal element and a substance that generates oxygen when heated; a step for heating the film, causing oxygen to be generated from the substance; and a step for reacting the metal element and a chalcogen element, thereby forming from the film a semiconductor layer that includes a metal chalcogenide.</p>
申请公布号 WO2013002057(A1) 申请公布日期 2013.01.03
申请号 WO2012JP65521 申请日期 2012.06.18
申请人 KYOCERA CORPORATION;YAMAMOTO, AKIO;OGURI, SEIJI;OGAWA, HIROMITSU;KITABAYASHI, AKI;ABE, SHINICHI;UMESATO, KAZUMASA;MATSUSHIMA, NORIHIKO;TAKEDA, KEIZO;KYUZO, MANABU;NISHIURA, KEN;HATATE, ATSUO 发明人 YAMAMOTO, AKIO;OGURI, SEIJI;OGAWA, HIROMITSU;KITABAYASHI, AKI;ABE, SHINICHI;UMESATO, KAZUMASA;MATSUSHIMA, NORIHIKO;TAKEDA, KEIZO;KYUZO, MANABU;NISHIURA, KEN;HATATE, ATSUO
分类号 H01L21/368;H01L31/04 主分类号 H01L21/368
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