发明名称 SEMICONDUCTOR DEVICE STRUCTURES INCLUDING TRANSISTORS WITH ENERGY BARRIERS ADJACENT TO TRANSISTOR CHANNELS AND ASSOCIATED METHODS
摘要 A semiconductor device structure includes a transistor with an energy barrier beneath its transistor channel. The energy barrier prevents leakage of stored charge from the transistor channel into a bulk substrate. Methods for fabricating semiconductor devices that include energy barriers are also disclosed.
申请公布号 US2013001593(A1) 申请公布日期 2013.01.03
申请号 US201213612376 申请日期 2012.09.12
申请人 MICRON TECHNOLOGY, INC.;MOULI CHANDRA V. 发明人 MOULI CHANDRA V.
分类号 H01L29/772;H01L21/20 主分类号 H01L29/772
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