发明名称 |
SEMICONDUCTOR DEVICE STRUCTURES INCLUDING TRANSISTORS WITH ENERGY BARRIERS ADJACENT TO TRANSISTOR CHANNELS AND ASSOCIATED METHODS |
摘要 |
A semiconductor device structure includes a transistor with an energy barrier beneath its transistor channel. The energy barrier prevents leakage of stored charge from the transistor channel into a bulk substrate. Methods for fabricating semiconductor devices that include energy barriers are also disclosed.
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申请公布号 |
US2013001593(A1) |
申请公布日期 |
2013.01.03 |
申请号 |
US201213612376 |
申请日期 |
2012.09.12 |
申请人 |
MICRON TECHNOLOGY, INC.;MOULI CHANDRA V. |
发明人 |
MOULI CHANDRA V. |
分类号 |
H01L29/772;H01L21/20 |
主分类号 |
H01L29/772 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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