| 摘要 |
Methods for forming backside illuminated (BSI) image sensors having vertical light shields are provided. Vertical light shields may be configured such that incoming light is blocked from reaching a portion of a pixel array formed on the backside illuminated image sensor. Vertical light shields may include horizontal portions that block direct illumination of dark pixels in the pixel array and vertical portions that block illumination of the dark pixels by reflected light. Vertical light shields may be formed from a dielectric layer, a layer of patterned light shield material formed over the dielectric layer and a passivation layer formed over the patterned light shield material. Vertical light shields may be formed by first etching a vertical trench in a device wafer layer over a portion of the pixel array and filling the vertical trench with light shield material to form the vertical light shield.
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