发明名称 METHOD AND SYSTEM FOR DESIGN OF A SURFACE TO BE MANUFACTURED USING CHARGED PARTICLE BEAM LITHOGRAPHY
摘要 A method and system for fracturing or mask data preparation are disclosed which can reduce the critical dimension variation of patterns formed on a resist-coated surface using particle beam lithography by providing a higher peak dosage near the perimeter of the patterns than in the interiors of the patterns.
申请公布号 WO2012118615(A3) 申请公布日期 2013.01.03
申请号 WO2012US25148 申请日期 2012.02.15
申请人 D2S, INC.;FUJIMURA, AKIRA 发明人 FUJIMURA, AKIRA
分类号 H01L21/027;G03F1/36 主分类号 H01L21/027
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