发明名称 |
PROCESS FOR TREATING A HETEROJUNCTION PHOTOVOLTAIC CELL |
摘要 |
<p>The invention provides a process for treating an n-type photovoltaic cell free from all but trace amounts of boron atoms, said process comprising the following steps: providing an n-type heterojunction photovoltaic cell (10) comprising a central crystalline silicon layer (1) on and under which two passivation layers (2, 3) made of hydrogenated amorphous silicon are deposited; heating this cell to a temperature between 20oC and 200oC, for example on a hot plate (20) or in an oven (40), while illuminating the photovoltaic cell with a light flux from a light source (30). The efficiency of the photovoltaic cell is thus improved and stabilized.</p> |
申请公布号 |
WO2013001440(A1) |
申请公布日期 |
2013.01.03 |
申请号 |
WO2012IB53204 |
申请日期 |
2012.06.25 |
申请人 |
COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIESALTERNATIVES;HARRISON, SAMUEL;RIBEYRON, PIERRE-JEAN |
发明人 |
HARRISON, SAMUEL;RIBEYRON, PIERRE-JEAN |
分类号 |
H01L31/20;H01L31/0747 |
主分类号 |
H01L31/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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