发明名称 SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME
摘要 A semiconductor device can include an insulation layer on that is on a substrate on which a plurality of lower conductive structures are formed, where the insulation layer has an opening. A barrier layer is on a sidewall and a bottom of the opening of the insulation layer, where the barrier layer includes a first barrier layer in which a constituent of a first deoxidizing material is richer than a metal material in the first barrier layer and a second barrier layer in which a metal material in the second barrier layer is richer than a constituent of a second deoxidizing material. An interconnection is in the opening of which the sidewall and the bottom are covered with the barrier layer, the interconnection is electrically connected to the lower conductive structure.
申请公布号 US2013005141(A1) 申请公布日期 2013.01.03
申请号 US201213616910 申请日期 2012.09.14
申请人 PARK JIN-HO;CHOI GIL-HEYUN;PARK BYUNG-LYUL;LEE JONG-MYEONG;CHOI ZUNG-SUN;JUNG HYE-KYUNG 发明人 PARK JIN-HO;CHOI GIL-HEYUN;PARK BYUNG-LYUL;LEE JONG-MYEONG;CHOI ZUNG-SUN;JUNG HYE-KYUNG
分类号 H01L21/768 主分类号 H01L21/768
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