METHOD FOR FINISHING A SUBSTRATE OF THE SEMICONDUCTOR-ON-INSULATOR TYPE

摘要

The invention relates to finishing a substrate of the semiconductor-on-insulator (SeOI) type comprising an insulator layer buried between two semiconducting material layers. The method successively comprises: routing the annular periphery of the substrate so as to obtain a routed substrate, and encapsulating the routed substrate so as to cover the routed side edge of the buried insulator layer by means of a semiconducting material.