发明名称 Methods of Forming Capacitors
摘要 Some embodiments include methods of making stud-type capacitors utilizing carbon-containing support material. Openings may be formed through the carbon-containing support material to electrical nodes, and subsequently conductive material may be grown within the openings. The carbon-containing support material may then be removed, and the conductive material utilized as stud-type storage nodes of stud-type capacitors. The stud-type capacitors may be incorporated into DRAM, and the DRAM may be utilized in electronic systems.
申请公布号 US2013005111(A1) 申请公布日期 2013.01.03
申请号 US201213615147 申请日期 2012.09.13
申请人 MICRON TECHNOLOGY, INC.;KIEHLBAUCH MARK;SHEA KEVIN R. 发明人 KIEHLBAUCH MARK;SHEA KEVIN R.
分类号 H01L21/02 主分类号 H01L21/02
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