发明名称 |
Methods of Forming Capacitors |
摘要 |
Some embodiments include methods of making stud-type capacitors utilizing carbon-containing support material. Openings may be formed through the carbon-containing support material to electrical nodes, and subsequently conductive material may be grown within the openings. The carbon-containing support material may then be removed, and the conductive material utilized as stud-type storage nodes of stud-type capacitors. The stud-type capacitors may be incorporated into DRAM, and the DRAM may be utilized in electronic systems.
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申请公布号 |
US2013005111(A1) |
申请公布日期 |
2013.01.03 |
申请号 |
US201213615147 |
申请日期 |
2012.09.13 |
申请人 |
MICRON TECHNOLOGY, INC.;KIEHLBAUCH MARK;SHEA KEVIN R. |
发明人 |
KIEHLBAUCH MARK;SHEA KEVIN R. |
分类号 |
H01L21/02 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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