发明名称 |
HIGH BREAKDOWN VOLTAGE INTEGRATED CIRCUIT ISOLATION STRUCTURE |
摘要 |
A high breakdown voltage integrated circuit isolator device communicates a digital signal from a signal input on one semiconductor die to a signal output on another semiconductor die while providing high voltage isolation between the signal input and the signal output. Each die may include a respective capacitive isolation barrier structure that couple together via a bonding wire between combined top metal/bonding pads of the capacitive isolation barrier structures.
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申请公布号 |
US2013001738(A1) |
申请公布日期 |
2013.01.03 |
申请号 |
US201113174390 |
申请日期 |
2011.06.30 |
申请人 |
SILICON LABORATORIES, INC.;DONG ZHIWEI |
发明人 |
DONG ZHIWEI |
分类号 |
H01L29/06 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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