发明名称 HIGH BREAKDOWN VOLTAGE INTEGRATED CIRCUIT ISOLATION STRUCTURE
摘要 A high breakdown voltage integrated circuit isolator device communicates a digital signal from a signal input on one semiconductor die to a signal output on another semiconductor die while providing high voltage isolation between the signal input and the signal output. Each die may include a respective capacitive isolation barrier structure that couple together via a bonding wire between combined top metal/bonding pads of the capacitive isolation barrier structures.
申请公布号 US2013001738(A1) 申请公布日期 2013.01.03
申请号 US201113174390 申请日期 2011.06.30
申请人 SILICON LABORATORIES, INC.;DONG ZHIWEI 发明人 DONG ZHIWEI
分类号 H01L29/06 主分类号 H01L29/06
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