INORGANIC SEMICONDUCTOR-SENSITIZED PHOTOELECTRIC DEVICE

摘要

The present invention relates to a photoelectric device having a novel structure which provides high efficiency, enables mass production through the use of low-priced raw materials, and can easily commercialize the photoelectric device. More specifically, the present invention relates to a photoelectric device including a surface of an inorganic semiconductor light absorber for receiving sunlight and generating photoelectrons and photoholes, and a dithiol pincer-shaped bipolar polarization layer for forming a partial or complete coating layer on a metal oxide electron carrier. The photoelectric device according to the present invention is characterized in that a photoelectric device having high efficiency can be manufactured by effectively transferring a charge carrier generated from the inorganic semiconductor light absorber to the metal oxide electron carrier.