SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

摘要

The present invention provides a manufacturing method for a semiconductor structure. The method comprises: providing an SOI substrate, and forming a gate structure on the SOI substrate; etching an SOI layer and a BOX layer of the SOI substrate at two sides of the gate structure, so as to form a groove exposing the BOX layer, a part of the groove entering the BOX layer; forming a flank wall at the sidewall of the groove; and forming a metal layer covering the flank wall in the groove, the metal layer contacting the SOI layer below the gate structure. Correspondingly, the present invention further provides a semiconductor structure formed with the foregoing method. In the manufacturing method and the semiconductor structure provided in the present invention, when a semiconductor device is working, the capacitance between a metal layer and a bulk-silicon layer of an SOI substrate is reduced, so as to facilitate promotion of performances of the semiconductor device.