发明名称 High Fill-Factor Laser-Treated Semiconductor Device on Bulk Material with Single Side Contact Scheme
摘要 The present disclosure provides systems and methods for configuring and constructing a single photo detector or array of photo detectors with all fabrications circuitry on a single side of the device. Both the anode and the cathode contacts of the diode are placed on a single side, while a layer of laser treated semiconductor is placed on the opposite side for enhanced cost-effectiveness, photon detection, and fill factor.
申请公布号 US2013001729(A1) 申请公布日期 2013.01.03
申请号 US201213540120 申请日期 2012.07.02
申请人 SIONYX, INC.;KURFISS NEAL T.;CAREY JAMES E.;LI XIA 发明人 KURFISS NEAL T.;CAREY JAMES E.;LI XIA
分类号 H01L31/0236;H01L27/146 主分类号 H01L31/0236
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