发明名称 |
High Fill-Factor Laser-Treated Semiconductor Device on Bulk Material with Single Side Contact Scheme |
摘要 |
The present disclosure provides systems and methods for configuring and constructing a single photo detector or array of photo detectors with all fabrications circuitry on a single side of the device. Both the anode and the cathode contacts of the diode are placed on a single side, while a layer of laser treated semiconductor is placed on the opposite side for enhanced cost-effectiveness, photon detection, and fill factor.
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申请公布号 |
US2013001729(A1) |
申请公布日期 |
2013.01.03 |
申请号 |
US201213540120 |
申请日期 |
2012.07.02 |
申请人 |
SIONYX, INC.;KURFISS NEAL T.;CAREY JAMES E.;LI XIA |
发明人 |
KURFISS NEAL T.;CAREY JAMES E.;LI XIA |
分类号 |
H01L31/0236;H01L27/146 |
主分类号 |
H01L31/0236 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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