| 摘要 |
A non-volatile semiconductor memory device according to embodiments has a memory cell array and a reading circuit, and, in a reading sequence, the reading circuit executes a prereading operation of supplying a first reading voltage to an adjacent word line and supplying a first reading pass voltage to a selected word line, and after executing the prereading operation, executes a main reading operation of supplying a fixed second reading voltage to the selected word line and supplying a fixed second reading pass voltage to the adjacent word line while sensing a plurality of electrical physical amounts of a target memory cell with different reading conditions.
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