| 摘要 |
This disclosure describes systems, methods, and apparatuses for generating an ionizing electromagnetic field via a remote plasma source such that the field controllably extends through a field projection portion where the field attenuates, to a plasma processing portion where the field is attenuated but still strong enough to sustain a plasma. The plasma has a low voltage and RF energy and can be used for a variety of semiconductor and thin film processing operations including chamber cleaning via radical generation, etching, and deposition.
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