| 摘要 |
This microwave plasma treatment device has: a power supply rod that is used for applying an RF bias high-frequency wave, and which is connected, at the top of the power supply rod, to a susceptor while connected, at the bottom, to a high-frequency output terminal of a matching box provided inside a matching unit; and a coaxial path that is formed by providing a cylindrical external conductor around the power supply rod serving as an internal conductor. A choking mechanism, which blocks spatial propagation of an unwanted microwave that has entered into the path from a plasma-generating space formed inside a chamber, is provided in the coaxial path so as to block the leakage of the microwave into an RF power supply line in the middle of the line in order to prevent a failure attributable to the leakage of the microwave. |
